Tem Investigation of Grain Boundaries in Polycrystalline Silicon
نویسندگان
چکیده
The structure of two near-coincidence boundaries (close to a I = 7 and a Z = 9 misorientation) occurring in commercial poly-silicon has been examined in TEM. Both the structure of secondary dislocation networks as well as the occurrence of a-fringes (indicating a relative translation of the crystals along the boundary) were investigated. The near Z = 7 boundary is found to contain a simple network in addition to a regular array of steps. The near Z = 9 boundary exhibits a-fringes and a dislocation network which appears as a different structure for different diffraction conditions.
منابع مشابه
Effects of grain boundaries on performance and hot-carrier reliability of excimer-laser annealed polycrystalline silicon thin film transistors
Articles you may be interested in Anomalous hot-carrier-induced degradation of offset gated polycrystalline silicon thin-film transistors Appl. Reliability of laser-activated low-temperature polycrystalline silicon thin-film transistors Appl. Erratum: " Effect of excimer laser annealing on the structural and electrical properties of polycrystalline silicon thin-film transistors " [J. Effect of ...
متن کاملFormation of intra-island grain boundaries in pentacene monolayers.
To assess the formation of intra-island grain boundaries during the early stages of pentacene film growth, we studied sub-monolayers of pentacene on pristine silicon oxide and silicon oxide with high pinning centre density (induced by UV/O(3) treatment). We investigated the influence of the kinetic energy of the impinging molecules on the sub-monolayer growth by comparing organic molecular beam...
متن کاملThe five parameter grain boundary character distribution of polycrystalline silicon
The purpose of this paper is to describe the five-parameter grain boundary character distribution (GBCD) of polycrystalline silicon and compare it to distributions measured in metals and ceramics. The GBCD was determined from the stereological analysis of electron backscatter diffraction maps. The distribution of grain boundary disorientations is non-random and has peaks at 36", 39", 45", 51", ...
متن کاملNanoindentation of polysilicon and single crystal silicon: Molecular dynamics simulation and experimental validation
This paper presents novel advances in the deformation behaviour of polycrystalline and single crystal silicon using molecular dynamics (MD) simulation and validation of the same via nanoindentation experiments. In order to unravel the mechanism of deformation, four simulations were performed: indentation of a polycrystalline silicon substrate with a (i) Berkovich pyramidal and a (ii) spherical ...
متن کاملElectronic transport in polycrystalline graphene.
Most materials in available macroscopic quantities are polycrystalline. Graphene, a recently discovered two-dimensional form of carbon with strong potential for replacing silicon in future electronics, is no exception. There is growing evidence of the polycrystalline nature of graphene samples obtained using various techniques. Grain boundaries, intrinsic topological defects of polycrystalline ...
متن کامل